Articolo in rivista, 2012, ENG, 10.4028/www.scientific.net/MSF.717-720.557

Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell

Fabbri Filippo 1; Rossi Francesca 1; Attolini Giovanni1; Bosi Matteo 1; Salviati Giancarlo 1; Iannotta Salvatore 1; Aversa, Lucrezia 2; Verucchi Roberto 2; Nardi Marco 2; Fukata Naoki 3; Dierre Benjamin 3; Sekiguchi Takashi 3

1. IMEM - Istituto dei materiali per l'elettronica ed il magnetismo - Parma 2. IMEM - Istituto dei materiali per l'elettronica ed il magnetismo - Trento 3. NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in a SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.

Materials science forum 717-720 , pp. 557–560

Keywords

silicon carbide, Characterization, Emission, Nanostructure, Nanowire

CNR authors

Fabbri Filippo, Aversa Lucrezia, Attolini Giovanni, Verucchi Roberto, Iannotta Salvatore, Nardi Marco Vittorio, Rossi Francesca, Bosi Matteo, Salviati Giancarlo

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo