Articolo in rivista, 1997, ENG

An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide

Cutolo, A. Iodice, M. Irace, A. Spirito, P. Zeni, L.

Department of Electronic Engineering, University of Naples Federico II, Via Claudio, 21, 80125 Naples, Italy

In this letter, we present a novel structure for light amplitude modulation based on a lateral p-i-n diode combined with a Bragg reflector which transforms the phase shift induced by the plasma dispersion effect in the intrinsic region of the diode into a voltage controlled variation of the reflectivity of the Bragg mirror. Numerical simulations show a modulation depth of 50% achieved in about 12 ns with a power dissipation of 4.0 mW and an insertion loss of 1.0 dB. The device is demonstrated to be very attractive in terms of power dissipation as compared to a Mach-Zehnder interferometer occupying the same area on chip. © 1997 American Institute of Physics.

Applied physics letters 71 (2), pp. 199–201

Keywords

Amplitude modulation, Carrier concentration, Charge carriers, Computer simulation, Energy absorption, Mirrors, Phase shift, Phase transitions, Semiconducting silicon, Voltage control, Waveguides, Bragg reflector, Free carrier absorption, Mach-Zehnder interferometer, Plasma dispersion effect, Power dissipation, Silicon on insulator technology

CNR authors

Iodice Mario

CNR institutes