Contributo in atti di convegno, 2015, ENG, 10.1063/1.4912531

Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications

Baldi, G.; Bosi, M.; Giusti, G.; Attolini, G.; Berzina, T.; Collini, C.; Lorenzelli, L.; Mosca, R.; Nozar, P.; Ponraj, J. S.; Toccoli, T.; Verucchi, R.; Iannotta, S.

IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma, Italy; IMEM-CNR Institute, Via alla Cascata 56/C, Povo - I-38123 Trento, Italy; FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento, Italy

We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO2 thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

INTERNATIONAL CONFERENCE ON NUMERICAL ANALYSIS AND APPLIED MATHEMATICS 2014 (ICNAAM-2014), pp. 28002-1–?, Rhodes, Greece, 22-28 September 2014

Keywords

memristor

CNR authors

Ponraj Joice Sophia, Giusti Giovanni, Attolini Giovanni, Verucchi Roberto, Iannotta Salvatore, Nozar Petr, Toccoli Tullio, Baldi Giacomo, Bosi Matteo, Ivanova Tatiana, Mosca Roberto

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo, IMEM – Istituto dei materiali per l'elettronica ed il magnetismo

ID: 335226

Year: 2015

Type: Contributo in atti di convegno

Creation: 2015-10-20 11:44:59.000

Last update: 2020-09-02 15:50:49.000

External links

OAI-PMH: Dublin Core

OAI-PMH: Mods

OAI-PMH: RDF

DOI: 10.1063/1.4912531

URL: http://dx.doi.org/10.1063/1.4912531

External IDs

CNR OAI-PMH: oai:it.cnr:prodotti:335226

DOI: 10.1063/1.4912531

ISI Web of Science (WOS): 000355339701086

Scopus: 2-s2.0-84939650012