Articolo in rivista, 2019, ENG, 10.1088/1748-0221/14/12/C12009

Characterisation of pixelated CdZnTe sensors using MAXIPIX

S. Tsigaridas; C. Ponchut; S. Zanettini; A. Zappettini

European Synchrotron Radiation Facility, 71 Avenue des Martyrs, 38000 Grenoble, France; IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100, Italy

In order to maximise the absoprtion efficiency ofX-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation. A promising material for future detector systems is Cadmium Zinc Telluride (CdZnTe). Redlen Technologies developed a novel CdZnTe material, optimised for applications with high photon fluxes. Such a material was used to fabricate pixelated CdZnTe sensors with a pitch of 55 ?m and 110 ?m. The sensors were flip-chip bonded to Timepix ASICs and their performance was characterised at the European Synchrotron Radiation Facility (ESRF) with conventional X-ray sources and monochromatic sychrotron beams using the MAXIPIX readout system. We present results concerning the uniformity, the stability and the spatial resolution of the sensors, obtained with X-ray energies up to 60 keV.

Journal of instrumentation 14 , pp. C12009-1–?

Keywords

Hybrid detectors; Pixelated detectors and associated VLSI electronics; X-ray detectors; X-ray diffraction detectors

CNR authors

Zanettini Silvia, Zappettini Andrea

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo