Articolo in rivista, 2018, ENG, 10.1016/j.mee.2018.02.024

Organic memristive element with Chitosan as solid polyelectrolyte

Cifarelli A.; Parisini A.; Berzina T.; Iannotta S.

Department of Mathematical, Physical and Computer Sciences, University of Parma, Viale G. P. Usberti 7A, 43124 Parma, Italy; CNR-IMEM, Parco Area delle Scienze 37A, 43124 Parma, Italy

The biomimetic devices such as the artificial synapses are of great significance because they can emulate the functions of biological systems. The development of memristive devices represents one of the most promising pathways towards adaptive and neuromorphic computing. This study reports the characterization of the first organic memristive element based on polyaniline-Chitosan (PANI-CS) junction. The Chitosan is used as solid polyelectrolyte in the active area of organic memristive element. Its working principle is based on the significant variation of the resistance of PANI in the oxidized and reduced states in junction area. The experimental parameters that influence the memristive behavior of Chitosan-based devices were studied by means of voltage-current measurements. The application of biocompatible material, the Chitosan, in organic memristive devices pave the way towards the application of organic memristor in bio-integrated systems.

Microelectronic engineering 193 , pp. 65–70

Keywords

Organic memristor devices; Chitosan gel; Polyelectrolyte; Biocompatible materials; Solid state electrochemistry

CNR authors

Iannotta Salvatore, Ivanova Tatiana

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo