Articolo in rivista, 2020, ENG, 10.1016/j.apsusc.2020.145491

Water desorption effects on the surface electrical resistance of air-exposed hydrogenated diamond

Flammini R.; Satta M.; Bellucci A.; Girolami M.; Wiame F.; Trucchi D.M.

CNR-ISM Istituto di Struttura della Materia, Via del Fosso del Cavaliere 100, 00133 Roma, Italy; CNR-ISMN Istituto dei Materiali Nanostrutturati, Dipartimento di Chimica Università di Roma "La Sapienza", P.le Aldo Moro 5, 00185 Roma, Italy; CNR-ISM Istituto di Struttura della Materia, Area della Ricerca di Roma 1, Via Salaria km 29.300, 00015 Monterotondo Stazione, Roma, Italy; PSL Research University, CNRS Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris, France.

The air-exposed hydrogenated diamond surface has been studied by carrier transport measurements and density functional theory. Our results have allowed us to understand the close relationship between the physisorbed water molecules and the electrical resistance. We have therefore been able to show that the evolution of the resistance over time and temperature can be related to the extent of the hole accumulation layer originating at the surface of the hydrogenated diamond. The method has allowed us to estimate the desorption energy of a single water molecule by means of resistance measurements alone.

Applied surface science 512 , pp. 145491–?

Keywords

diamond, hydrogenated diamond, electrical conductivity, DFT, desorption energy, water molecule, charge transfer

CNR authors

Satta Mauro, Trucchi Daniele Maria, Flammini Roberto, Girolami Marco, Bellucci Alessandro

CNR institutes

ISM – Istituto di struttura della materia