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Articolo in rivista, 2020, ENG, 10.3390/app10072440

Atomic layer deposition of high-k insulators on epitaxial graphene: A review

Giannazzo F.; Schiliro E.; Lo Nigro R.; Roccaforte F.; Yakimova R.

CNR-IMM, Strada VIII 5, Catania, 95121, CNR-IMM, Strada VIII, 5 95121 Catania, Italy; raffaella.lonigro@imm.cnr.it (R.L.N.); fabrizio.roccaforte@imm.cnr.it (F.R.), , Italy; Department of Physics Chemistry and Biology, Linköping University, Linköping, SE-58183, Department of Physics Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; rositsa.yakimova@liu.se; Correspondence: filippo.giannazzo@imm.cnr.it (F.G.); emanuela.schiliro@imm.cnr.it (E.S.), , Sweden

Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology and sensing. The deposition of ultrathin high-k insulators on its surface is a key requirement for the fabrication of EG-based devices, and, in this context, atomic layer deposition (ALD) is the most suitable candidate to achieve uniform coating with nanometric thickness control. This paper presents an overview of the research on ALD of high-k insulators on EG, with a special emphasis on the role played by the peculiar electrical/structural properties of the EG/SiC (0001) interface in the nucleation step of the ALD process. The direct deposition of AlO thin films on the pristine EG surface will be first discussed, demonstrating the critical role of monolayer EG uniformity to achieve a homogeneous AlO coverage. Furthermore, the ALD of several high-k materials on EG coated with different seeding layers (oxidized metal films, directly deposited metal-oxides and self-assembled organic monolayers) or subjected to various prefunctionalization treatments (e.g., ozone or fluorine treatments) will be presented. The impact of the pretreatments and of thermal ALD growth on the defectivity and electrical properties (doping and carrier mobility) of the underlying EG will be discussed.

Applied sciences 10 , pp. 2440-1–2440-20