Articolo in rivista, 2019, ENG, 10.1039/c9nr08750h
Vandalon, Vincent; Sharma, Akhil; Perrotta, Alberto; Schrode, Benedikt; Verheijen, Marcel A.; Botta, Ageeth A.
Eindhoven Univ Nchnol; Graz Univ Technol; Eurofins Mat Sci Netherlands BV
Texture has a significant impact on several key properties of transition-metal dichalcogenides (TMDs) films. Films with in-plane oriented grains have been successfully implemented in nano- and opto-electronic devices, whereas, films with out-of-plane oriented material have shown excellent performance in catalytic applications. It will be demonstrated that the texture of nanocrystalline TMD films can be determined with polarized Raman spectroscopy. A model describing the impact of texture on the Raman response of 2D-TMDs will be presented. For the specific case of MoS2, the model was used to quantify the impact of texture on the relative strength of the A(1g) and E-2g(1) modes in both the unpolarized and polarized Raman configuration. Subsequently, the capability to characterize texture by polarized Raman was demonstrated on various MoS2 films grown by atomic-layer deposition (ALD) and validated by complementary transmission electron microscopy (TEM) and synchrotron based 2D grazing-incidence X-ray diffraction (GIXD) measurements. This also revealed how the texture evolved during ALD growth of MoS2 and subsequent annealing of the films. The insights presented in this work allow a deeper understanding of Raman spectra of nanocrystalline TMDs and enable a rapid and non-destructive method to probe texture.
Nanoscale (Print) 11 (47), pp. 22860–22870
atomic layer deposition, MoS2, TMD, Raman spectroscopy
ID: 444945
Year: 2019
Type: Articolo in rivista
Creation: 2021-02-15 16:15:27.000
Last update: 2021-02-15 16:15:27.000
CNR authors
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:444945
DOI: 10.1039/c9nr08750h
ISI Web of Science (WOS): 000506887500017