Contributo in volume, 2020, ENG, 10.1002/9783527825264.ch1

Introduction to Gallium Nitride Properties and Applications

Fabrizio Roccaforte and Mike Leszczynski

1. CNR-IMM, Catania, Italy 2. UNIPRESS-PAS, Warsaw, Poland

This chapter is a general introduction to the properties and applications of GaN and related materials. After an historical background on the relevant milestones of nitrides research, special emphasis will be put on InGaN quantum wells and AlGaN/GaN heterostructures, which are important systems for light-emitting diodes (LEDs), laser diodes (LDs), and high electron mobility transistors (HEMTs). The main applications of nitride materials for both optoelectronic devices and power- and high-frequency electronics are also described, anticipating some of the most critical issues that are illustrated in detail in the rest of the book.

Keywords

gallium nitride, power electronics, optoelectronic devices

CNR authors

Roccaforte Fabrizio

CNR institutes

IMM – Istituto per la microelettronica e microsistemi