Articolo in rivista, 2023, ENG, 10.1002/admt.202201555
Battistoni S.; Carcione R.; Tamburri E.; Erokhin V.; Terranova M.L.; Iannotta S.
Inst Mat Elect & Magnetism CNR IMEM, Consiglio Nazl Ric, Parco Area Sci 37A, I-43124 Parma, Italy; Univ Roma Tor Vergata, Dip to Sci & Tecnol Chim, Via Ric Scientif, I-00133 Rome, Italy; Univ Roma Tor Vergata, Ctr Ric Interdipartimentale Med Rigenerativa CIMER, Via Montpellier 1, I-00133 Rome, Italy
The great demand of multifunctional portable electronic products in daily life and the need of a large integration of memories with logic devices and sensors, have increased the interest in the identification of suitable materials for neuromorphic computing applications. Major innovations in this direction have been achieved by exploring materials belonging to different fields of applications and taking advantage of already consolidated deposition methods. Despite the great interest in the field and the large use in complementary applications such as sensing electrodes, neural and cellular interfaces, the use of diamond-like materials in neuromorphic applications is still limited to a few examples. Here, the development of a synaptic element based on high-quality polycrystalline diamond layers containing Ti inclusions showing a marked and reproducible resistance switching behavior is reported. Realized by means of a hybrid chemical vapor deposition-powder flowing technique, this titanium doped diamond shows a 3D polycrystalline organization that is characterized by globular grains of a few microns. The coupling of Raman spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction analyses confirms the good quality of diamond phase and convincingly points out the inclusion of the titanium species within the diamond lattice.
Advanced materials technologies (Weinheim) Online , pp. 2201555-1–2201555-9
diamond, memristive device, resistance switching, synapse
Iannotta Salvatore, Carcione Rocco, Battistoni Silvia, Erokhin Victor
IMEM – Istituto dei materiali per l'elettronica ed il magnetismo
ID: 478667
Year: 2023
Type: Articolo in rivista
Creation: 2023-03-03 12:14:19.000
Last update: 2023-03-07 10:04:29.000
External links
OAI-PMH: Dublin Core
OAI-PMH: Mods
OAI-PMH: RDF
URL: https://onlinelibrary.wiley.com/doi/10.1002/admt.202201555
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:478667
DOI: 10.1002/admt.202201555
Scopus: 2-s2.0-85147275765
ISI Web of Science (WOS): 000921529600001