Articolo in rivista, 2023, ENG, 10.1002/admt.202201555

A Ti-Doped Chemical Vapor Deposition Diamond Device as Artificial Synapse for Neuromorphic Applications

Battistoni S.; Carcione R.; Tamburri E.; Erokhin V.; Terranova M.L.; Iannotta S.

Inst Mat Elect & Magnetism CNR IMEM, Consiglio Nazl Ric, Parco Area Sci 37A, I-43124 Parma, Italy; Univ Roma Tor Vergata, Dip to Sci & Tecnol Chim, Via Ric Scientif, I-00133 Rome, Italy; Univ Roma Tor Vergata, Ctr Ric Interdipartimentale Med Rigenerativa CIMER, Via Montpellier 1, I-00133 Rome, Italy

The great demand of multifunctional portable electronic products in daily life and the need of a large integration of memories with logic devices and sensors, have increased the interest in the identification of suitable materials for neuromorphic computing applications. Major innovations in this direction have been achieved by exploring materials belonging to different fields of applications and taking advantage of already consolidated deposition methods. Despite the great interest in the field and the large use in complementary applications such as sensing electrodes, neural and cellular interfaces, the use of diamond-like materials in neuromorphic applications is still limited to a few examples. Here, the development of a synaptic element based on high-quality polycrystalline diamond layers containing Ti inclusions showing a marked and reproducible resistance switching behavior is reported. Realized by means of a hybrid chemical vapor deposition-powder flowing technique, this titanium doped diamond shows a 3D polycrystalline organization that is characterized by globular grains of a few microns. The coupling of Raman spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction analyses confirms the good quality of diamond phase and convincingly points out the inclusion of the titanium species within the diamond lattice.

Advanced materials technologies (Weinheim) Online , pp. 2201555-1–2201555-9

Keywords

diamond, memristive device, resistance switching, synapse

CNR authors

Iannotta Salvatore, Carcione Rocco, Battistoni Silvia, Erokhin Victor

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo

ID: 478667

Year: 2023

Type: Articolo in rivista

Creation: 2023-03-03 12:14:19.000

Last update: 2023-03-07 10:04:29.000

External IDs

CNR OAI-PMH: oai:it.cnr:prodotti:478667

DOI: 10.1002/admt.202201555

Scopus: 2-s2.0-85147275765

ISI Web of Science (WOS): 000921529600001