Poster, 2022, ENG, 10.1109/EPTC56328.2022.10013111

Wafer Level Fabrication of cMUT using Bonding and Interconnection Technique without TSV/TGV

Aditi; Agarwal R.; Sharma R.; Maiolo L.; Minotti A.; Maita F.; Mukhiya R.

CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, India, , India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, India, , India; Institute for Microelectronics and Microsystems (IMM)-CNR, Rome, Institute for Microelectronics and Microsystems (IMM)-CNR, Rome, Italy, , Italy

The paper presents a wafer-level fabrication of a capacitive micromachined ultrasonic transducer (cMUT) using a wafer bonding process and interconnection technique without through silicon vias (TSV)/through glass vias (TGV) process. Anodic bonding technique is utilized for the fabrication and bottom electrode connections are taken by etching the structural layer of Silicon and silicon dioxide. The developed approach is reliable, repeatable and suitable for integration. An element having an array of 125 circular cMUT cell is reported having center frequency of 4.4 MHz.

2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), pp. 199–202, Singapore, 07/12/2022,09/12/2022

Keywords

CMUT fabrication

CNR authors

Minotti Antonio, Maiolo Luca, Maita Francesco

CNR institutes

ID: 481781

Year: 2022

Type: Poster

Creation: 2023-05-23 12:27:15.000

Last update: 2023-05-23 12:27:15.000

External IDs

CNR OAI-PMH: oai:it.cnr:prodotti:481781

DOI: 10.1109/EPTC56328.2022.10013111

Scopus: 2-s2.0-85147425045