Contributo in atti di convegno, 2021, ENG, 10.1109/MetroAeroSpace51421.2021.9511657

Low temperature dielectrics for improving interface state density in SiC devices to be deployed in avionics

Maiolo L.; Lucarini I.; Piccardi A.; Maita F.

IMM - Istituto per la Microelettronica e Microsistemi, CNR - Consiglio Nazionale Delle Ricerche, Italia, Roma, IMM - Istituto per la Microelettronica e Microsistemi - CNR - Consiglio Nazionale delle Ricerche, Roma, Italia, , Italy

Silicon Carbide based electronics remains the most suitable choice to replace silicon in power electronics. Especially in avionics SiC devices represent a reliable solution for reducing weight and size of aircraft power switching technology. However, some issues need to be solved to unleash the full potential of this kind of electronics. The most important challenge is related to the quality of the dielectric/SiC interface and to the techniques implemented to fabricate this interface. In this work, we investigate the morphological and electrical properties of low temperature dielectric films deposited on SiC substrate by using ECR-PECVD. To this end, we fabricated capacitors with silicon dioxide layer, deposited at low temperature, studying their performance with and without surface pretreatments and considering post-annealing effects at different temperatures and times.

2021 IEEE 8th International Workshop on Metrology for AeroSpace (MetroAeroSpace), pp. 392–396, 23/06/2021,25/06/2021

Keywords

Silicon Oxide, ECR-PECVD, SiC substrate, Power electronics

CNR authors

Lucarini Ivano, Maiolo Luca, Maita Francesco

CNR institutes