Contributo in atti di convegno, 2023, ENG, 10.1007/978-3-031-26066-7_30
Gullino, Alberto; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Debernardi, Pierluigi
Consiglio Nazionale delle Ricerche; Politecnico di Torino
Among possible strategies to improve the performance of near infrared AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for short-reach interconnects, current injection schemes based on tunnel junctions (TJs) may be an enabling technology to meet the high temperature requirements of data-center applications. To assess the merits of TJs in this context, we perform a comparative simulation-based study of a commercial pin VCSEL and a modified structure where holes are injected into the active region through a TJ. Band-to-band tunneling probabilities are computed within a multiband nonequilibrium Green's function (NEGF) approach. The resulting generation rates are included in a quantum-corrected drift-diffusion model for carrier transport. The optical modes of the cavity are found with an electromagnetic solver, and self-heating effects are studied with a thermal model. The comparative multiphysical 1D and 3D simulations of pin and TJ-VCSELs predict that the voltage penalty introduced by the reverse-biased TJ is compensated by the higher output optical power.
53rd Annual Meeting of the Italian Electronics Society, pp. 190–195, Pizzo Calabro, 07-09/09/2022
NEGF, Optoelectronics, Physics-based, TJ, VCSEL
Gullino Alberto, Debernardi Pierluigi
IEIIT – Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
ID: 492066
Year: 2023
Type: Contributo in atti di convegno
Creation: 2024-01-26 10:33:54.000
Last update: 2024-01-26 11:15:39.000
CNR authors
External links
OAI-PMH: Dublin Core
OAI-PMH: Mods
OAI-PMH: RDF
DOI: 10.1007/978-3-031-26066-7_30
URL: http://www.scopus.com/record/display.url?eid=2-s2.0-85149929806&origin=inward
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:492066
DOI: 10.1007/978-3-031-26066-7_30
Scopus: 2-s2.0-85149929806