Articolo in rivista, 2007, ENG, 10.1002/adfm.200700004
A. Brillante, I. Bilottti, C. Albonetti, J.F. Moulin, P. Stoliar, F. Biscarini, D.M. de Leeuw
Univ Bologna, Dipartimento Chim Fis & Inorgan, I-40136 Bologna, Italy. Univ Bologna, INSTM UdR Bologna, I-40136 Bologna, Italy. Inst Study Nanostruct Mat, CNR, I-40129 Bologna, Italy. Philips Res, NL-5056 AA Eindhoven, Netherlands.
We report confocal micro-Raman spectra of the organic semiconductor alpha-sexithiophene (T6) on bulk crystals and on thin films grown on technologically relevant substrates and devices. We show that the two polymorphs, which are clearly identified by their lattice phonon spectra, may coexist as physical impurities of one inside the other in the same crystallite. Spatial distribution of the two phases is monitored by Raman phonon mapping of crystals grown upon different conditions. Raman microscopy has then been extended to T6 thin films grown on silicon oxide wafers. We identify the crystal phase in thin films whose thickness is just 18 run. The most intense total-symmetric Raman vibration is still detectable for a two-monolayer thick film. Comparative analysis between micro-Raman and AFM of T6 thin films grown on field effect transistors shows that electrode-channel steps favour the nucleation and growth of T6 molecules on the substrate, at least below 50 nm.
Advanced functional materials (Print) 17 (16), pp. 3119–3127
THIN-FILM TRANSISTORS, ORGANIC SEMICONDUCTORS, SINGLE-CRYSTALS, POLYMORPHS, GROWTH
Biscarini Fabio, Albonetti Cristiano
ID: 53650
Year: 2007
Type: Articolo in rivista
Creation: 2009-06-16 00:00:00.000
Last update: 2012-04-21 12:23:37.000
CNR authors
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:53650
DOI: 10.1002/adfm.200700004
ISI Web of Science (WOS): 000250989600012