Contributo in atti di convegno, 2008, ENG

Homodyne mixing at 150 GHz in a high electron mobility transistor

M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c) and V. Foglietti (a)

a. Istituto di Fotonica e Nanotecnologie CNR, Rome, 00156 Italy b. ENEA - Centro Ricerche Frascati, 00044 Italy c. Selex Sistemi Integrati, Rome, 00156 Italy

We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasidc output signal, which makes the HEMT a detector of the radiation at 150 GHz.

IRMMW-THz 2008, pp. 462–463, Pasadena, California,USA, SEP 15-19, 2008

Keywords

CNR authors

Evangelisti Florestano, Di Gaspare Alessandra, Ortolani Michele, Foglietti Vittorio, Giovine Ennio

CNR institutes

IFN – Istituto di fotonica e nanotecnologie