Two-dimensional materials with high charge carrier mobility and tunable band gaps have attracted intense research effort for their potential use in nanoelectronics. Two-dimensional ?-conjugated polymers constitute a promising subclass because the band structure can be manipulated by varying the molecular building blocks while preserving key features such as Dirac cones and high charge mobility. The major barriers to the application of two-dimensional ?-conjugated polymers have been the small domain size and high defect density attained in the syntheses explored so far. Here, we demonstrate the fabrication of mesoscale ordered two-dimensional ?-conjugated polymer kagome lattices with semiconducting properties, Dirac cone structures and flat bands on Au(111). This material has been obtained by combining a rigid azatriangulene precursor and a hot dosing approach, which favours molecular diffusion and eliminates voids in the network. These results open opportunities for the synthesis of two-dimensional ?-conjugated polymer Dirac cone materials and their integration into devices.

Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), exhibit a variety of properties that could be useful in the development of novel electronic devices. However, nanopatterning metal electrodes on such atomic layers, which is typically achieved using electron beam lithography, is currently problematic, leading to non-ohmic contacts and high Schottky barriers. Here, we show that thermal scanning probe lithography can be used to pattern metal electrodes with high reproducibility, sub-10-nm resolution, and high throughput (10(5) mu m(2) h(-1) per single probe). The approach, which offers simultaneous in situ imaging and patterning, does not require a vacuum, high energy, or charged beams, in contrast to electron beam lithography. Using this technique, we pattern metal electrodes in direct contact with monolayer MoS2 for top-gate and back-gate field-effect transistors. These devices exhibit vanishing Schottky barrier heights (around 0 meV), on/off ratios of 10(10), no hysteresis, and subthreshold swings as low as 64 mV per decade without using negative capacitors or hetero-stacks.

In this paper we present first-principles calculations, based on both density functional theory and maximally localized Wannier functions, to study the electronic properties and interlayer coupling of twisted MoS2/NbSe2 heterobilayers. We accurately investigate different stacking configurations and commensurate twist angles by including an in-depth analysis of the interlayer van der Waals interaction. The metallic character of the investigated heterostructures is dominated, at the Fermi energy, by the NbSe2 atomic orbitals and shows a strong dependence on the twist angle. Notably, at the smallest considered twist angle, band structure flattening at the Fermi energy shows up, which should result in a lower conductivity of the metallic heterobilayer. The electrostatic potential analysis reveals no significant modification of the potential pattern with respect to the potentials of the isolated layers, with the exception of the interface region. A moderate electronic charge redistribution, compatible with electronically weakly coupled layers, is set up following the formation of the interface. The dependence of the electronic structure on the twist angle acts as a new degree of freedom for tuning properties relevant in electronic device applications.

We report on Raman experiments performed on a MoTe2 single crystal. The system belongs to the wide family of transition metal dichalcogenides which includes several of the most interesting two-dimensional materials for both basic and applied physics. Measurements were performed in the standard basal plane configuration, by placing the ab plane of the crystal perpendicular to the wave vector k(i) of the incident beam to explore the in-plane vibrational modes, and in the edge plane configuration with k(i) perpendicular to the crystal c axis, thus mainly exciting out-of-plane modes. For both configurations we performed a polarization-dependent study of the first-order Raman components and detailed computation of the corresponding selection rules. We were thus able to provide a complete assignment of the observed first-order Raman peaks, in agreement with previous literature results. A thorough analysis of the second-order Raman bands, as observed in both basal and edge plane configurations, provides new information and allows a precise assignment of these spectral structures. In particular, we have observed and assigned Raman active modes of the M point of the Brillouin zone previously predicted by ab initio calculations but never previously measured.