The question of optical bandgap anisotropy in the monoclinic semiconductor beta-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk beta-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV; polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift in the b onset is due to a suppression of the transition matrix elements of the three top valence bands at Gamma point.

A polarization stabilizing device and method based on controlling the phase retardation of a pair of variable phase retarders with a controller such that the first of the variable retarders has its phase retardation switched between first and second values whenever the phase retardation of the second of the variable retarders reaches an upper or a lower limit. The upper and lower limits of the second retarder and the first and second values of the first retarder are chosen so that discontinuities in the power of the output optical signal are avoided when the first variable retarder is switched, thereby providing endless polarization stabilization using phase retarders that themselves have only limited retardation ranges.