Poster, 2005,

Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient

Nipoti R, Bergamin F, Moscatelli F, Poggi A, Canino M, Bertuccio G

CNR-IMM DIEI and INFN University of Perugia INFN University of Bologna Dipartimento di Elettronica e Informazione Politecnico di Milano

ICSCRM 2005, Pittsburgh (Pennsylvania, USA)

Keywords

wide band gap semiconductors, 4H-SiC, ion implanted diodes, lekage currents

CNR authors

Bergamini Fabio, Moscatelli Francesco, Canino Maria Concetta, Poggi Antonella, Nipoti Roberta

CNR institutes

IMM – Istituto per la microelettronica e microsistemi