In this work, sulfonated pentablock copolymer (s-PBC) and s-PBC mixed with graphene oxide (s-PBC_GO) layers were deposited on polypropylene (PP) fibrous filters and tested as active coatings for the removal of cobalt ions from water using adsorption and filtration processes. Some of the coated filters were treated by UV light irradiation to modify their hydrophilic properties. The filters were characterized, before and after the processes, by energy-dispersive X-ray (EDX) analysis and Fourier transform infrared spectroscopy (FT-IR). The Qt (mg/g) values, defined as the weight ratio between the removed ions and the coating layer, were evaluated. In the case of adsorption processes, the best results for the removal of Co2+ ions were achieved by the s-PBC_GO coating, with a Qt of 37 mg/g compared to 21 mg/g obtained by the s-PBC. This was ascribed to the presence of GO, which contains more favorable sites able to adsorb positive ions from the solution. Vice versa, for filtration processes, the s-PBC coated filters show similar or slightly better results than the s-PBC_GO coated ones. Such differences can be ascribed to the shorter contact time between the solution and the coating layer in the case of filtration, with respect to adsorption processes, thus reducing the chance for the ions to be adsorbed on the GO layers before passing through the filter. A collateral effect, observed in this study and enhanced in the case of UV-treated coatings, is the release of radical oxysulfur species. The mechanisms involved in this effect are discussed and identified as a consequence of the interaction between the coating layers and metal ions. In order to identify the mechanism of oxysulfur radicals formation and considering a water sample closer to real water, the Co2+ ions adsorption experiments were conducted in the presence of a competitive organic contaminant (i.e., methyl orange, MO).

The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under UV laser irradiation has been studied in detail with particular focus on single pulse approach, in order to describe the early stage of reaction process. The use of a multi pulse approach, for the formation of Ni silicide-based ohmic contacts by means of excimer laser annealing, has been investigated in this work. The reaction process has been characterized, as a function of number of pulses, by means of X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. Laser process simulations, formulated in the framework of phase-field theory, have been performed in order to predict the evolution of material during reaction under annealing. Simulations show that reaction moves to Si-rich phases with increasing number of pulses, with a co-existence of Ni2Si and Ni3Si2 phases for the three pulses process. Moreover, simulations show critical differences, in terms of the uniformity of the distribution of the silicide phases along the film, between the single pulse and the multi pulses cases and the increasing of thickness of silicide phases with the pulse sequence. These predictions are in good agreement with the findings of XRD and TEM analyses. The electrical properties of the reacted layer have been evaluated on Schottky Barrier Diodes (SBD) devices, confirming the ohmic behaviour of multi pulse annealed samples.

In this paper, metamaterial and microsystem concepts have been used to study resonating structures useful for narrowband microwave signal processing. U-shaped resonators and triangular Sierpinski structures have been designed, manufactured, and tested for possible applications in the K-Band, around 20 GHz and 26 GHz, for satellite communications. Results on the metamaterial nature of both configurations and on their electrical performance are discussed. The studied structures include the possible implementation by RF MEMS of the U-resonators. The outlined novelty is in obtaining a tunable narrow-band filter using an all-passive environment with switches embedded in the resonator. The advantages and drawbacks of this solution and the proposed optimization are discussed in detail. Triangular resonators with the Sierpinski geometry are also considered for the same frequencies. In this case, the possibility to tune the frequency of operation is demanded to increase the complexity of the internal geometry of the triangle by means of empty sub-triangles in the metal path. Examples of the expected performances for coupled triangular structures are also presented.

The electrochemical hydrogen evolution reaction (HER) is one of the most promising green methods for the efficient production of renewable and sustainable H2, for which platinum possesses the highest catalytic activity. Cost-effective alternatives can be obtained by reducing the Pt amount and still preserving its activity. The Pt nanoparticle decoration of suitable current collectors can be effectively realized by using transition metal oxide (TMO) nanostructures. Among them, WO3 nanorods are the most eligible option, thanks to their high stability in acidic environments, and large availability. Herein, a simple and affordable hydrothermal route is used for the synthesis of hexagonal WO3 nanorods (average length and diameter of 400 and 50 nm, respectively), whose crystal structure is modified after annealing at 400 °C for 60 min, to obtain a mixed hexagonal/monoclinic crystal structure. These nanostructures were investigated as support for the ultra-low-Pt nanoparticles (0.2-1.13 ?g/cm2): decoration occurs by drop casting some drops of a Pt nanoparticle aqueous solution and the electrodes were tested for the HER in acidic environment. Pt-decorated WO3 nanorods were characterized by performing scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), Rutherford backscattering spectrometry (RBS), linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS) and chronopotentiometry. HER catalytic activity is studied as a function of the total Pt nanoparticle loading, thus obtaining an outstanding overpotential of 32 mV at 10 mA/cm2, a Tafel slope of 31 mV/dec, a turn-over frequency of 5 Hz at -15 mV, and a mass activity of 9 A/mg at 10 mA/cm2 for the sample decorated with the highest Pt amount (1.13 ?g/cm2). These data show that WO3 nanorods act as excellent supports for the development of an ultra-low-Pt-amount-based cathode for efficient and low-cost electrochemical HER.

Despite the great utility of nanoparticles (NPs) in water remediation, their effects on marine ecosystems are unknown and unpredictable. The toxicity of the most used nanoparticles, such as ZnO, Ag, and TiO2 on the purple sea urchin, Paracentrotus lividus (Lamarck, 1816), has been demonstrated by several authors. The aim of this study was to evaluate the effects of TiO2 sol-gel and TiO2-rGO nanocompounds on both vitality and motility of spermatozoa of P. lividus. The spermatozoa were exposed at different times (30 and 60 min) and concentrations (10, 20, 40 µg/mL) of both nano-TiO2 compounds. The results clearly showed a decrease in both vitality and motility of P. lividus spermatozoa exposed. In particular, vitality and motility were inversely related to both exposure time and concentration of TiO2 sol-gel and TiO2-rGO nanocompounds.

Nanocomposites formed by aluminum-doped zinc oxide nanoparticles (AZO-NP) and multiwall carbon nanotubes (CNT) are proposed here as a promising material for UV light sensing applications, with the great advantage of operating in air, at room temperature, and at low voltage. Nanocomposite layers were prepared with different AZO:CNT weight ratios by a simple methodology at room temperature. They were characterized by means of UV-Vis spectroscopy, scanning and transmission electron microscopies (SEM and TEM), and X-ray photoelectron spectroscopy (XPS). The interaction between the two nanomaterials was demonstrated by comparing the properties of the nanocomposite with the ones shown by the AZO-NPs. Dense AZO-CNT nanocomposite layers were deposited between two metal electrodes on a SiO2/Si substrate, and the electrical properties were investigated in dark condition and under UV light irradiation. The electrical response to the UV light was a sudden current increase that reduced when the light was switched off. Several UV on/off cycles were performed, showing good repeatability and stability of the response. The mechanisms involved in the electrical response are discussed and compared to the ones previously reported for ZnO-CNT nanocomposites.

The deposition of crystalline TiO2 on polymers can boost its use in a large plethora of applications. In this work, we deposited, through the low-temperature atomic layer deposition (LT-ALD) technique, a thin layer of amorphous TiO2 on polymethyl-methacrylate (PMMA), and afterwards, we induced a phase transition from amorphous to crystalline anatase by pulsed UV-laser irradiation. A pulsed UV laser with a low penetration length was used to avoid the heating and damaging of the polymeric substrate. The diffusion of the heat and the temperature behaviour were simulated and discussed. We studied experimentally the effect of the laser fluence and pulse number on the amorphous-crystal transition. We observed the presence of two thresholds for the formation of the crystalline phase: on the fluence and the number of laser shots. Moreover, widening of pre-existing cracks is observed, as soon as fluence and the number of pulses increase. To improve further the quality of the deposited layer, we introduced a ZnO interlayer between TiO2 and the PMMA substrate. The effect of this interlayer was also discussed. Lastly, wettability, as a measure of the overall quality of the layer, was measured and interpreted by using the Cassie model.

(0001) oriented aluminum nitride (AlN) thin films have been grown by plasma enhanced atomic layer deposition (PE-ALD) on silicon carbide (4H-SiC) substrates. During different PE-ALD processes, the ammonia (NH3) plasma pulsing time has been varied and its effect on the microstructure and on the orientation degree of the AlN layers has been monitored. Structural characterization by Transmission Electron Microscopy (TEM) showed that the crystalline structure of the deposited films was strongly dependent on the NH3-plasma pulsing, so that different polymorphic structures were observed. In particular, both processes resulted in wurtzite AlN structure for few nanometers at the interface with the 4H-SiC substrate, while upon increasing thickness a poly-crystalline wurtzite phase was obtained by short-pulse NH3-plasma, whereas longer plasma exposure resulted in a mixture of wurtzite and zincblende defective phases. Phase formation mechanism were discussed and electrical nanoscopic characterization by conductive atomic force microscopy showed a clear correlation between the different AlN crystalline phases and the insulating properties.

Gallium nitride (GaN) has superior physical properties suitable for the realization of power switching and high-frequency transistors with better performances than of conventional Si-based devices. In the presence of a bidimensional electron gas (2DEG) close to the interface of AlGaN/GaN heterojunctions, High Electron Mobility Transistors (HEMT) can be fabricated. Ion implantation is an affordable industrial process for the electrical isolation of 2DEG in adjacent AlGaN/GaN HEMTs devices. In this work, we studied the electrical isolation of the 2DEG produced by Ar ion implantation. 2DEG of heterostructure consisting of 18 nm Al0.2Ga0.8N were grown onto carbon doped n-type GaN. The 2DEG has been isolated by Ar ions implantation at 15, 22.5 and 60 keV and fluence of 7 × 1013 cm-2, respectively. The implanted samples were annealed at 600, 750 and 900 °C, respectively, and the thermal stability of the crystal damage and isolation were analyzed by photoluminescence spectroscopy (PL) and capacitance-voltage profiling (CV) through mercury probe analysis. We found that Ar ion implantation at the explored ion energies and fluence produces a significant reduction of the PL peak intensity assigned to radiative recombination at the band edge of GaN, confirming the crystal lattice damage induced by the implant. The PL spectral features are matched by a significant reduction of the 2 DEG carrier density of about six orders of magnitude with respect to the undamaged sample. The reduction of carrier density and, then, the isolation of the 2DEG was found stable at temperature up to 900 °C.

Nuclear reactions play a key role in the framework of the Big Bang Nucleosynthesis. A network of 12 principal reactions has been identified as the main path which drives the elemental nucleosynthesis in the first twenty minutes of the history of the Universe. Among them an important role is played by neutron-induced reactions, which, from an experimental point of view, are usually a hard task to be measured directly. Nevertheless big efforts in the last decades have led to a better understanding of their role in the primordial nucleosynthesis network. In this work we apply the Trojan Horse Method to extract the cross section at astrophysical energies for the 3He(n,p)3H reaction after a detailed study of the 2H(3He,pt)H three-body process. The experiment was performed using the 3He beam, delivered at a total kinetic energy of 9 MeV by the Tandem at the Physics and Astronomy Department of the University of Notre Dame. Data extracted from the present measurement are compared with other published sets available in literature. Astrophysical applications will also be discussed in details.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si. Such sources are fabricated with a fully-compatible CMOS process on a 220 nm-thick silicon-on-insulator (SOI) wafer, the common standard in silicon photonics. The implantation depth is tuned to match the center of the silicon layer. The erbium and oxygen co-doping ratio is tuned to optimize the electroluminescence signal. We fabricate a batch of Er:O diodes with surface areas ranging from 1 µm × 1 µm to 50 µm × 50 µm emitting 1550 nm photons at room temperature. We demonstrate emission rates around 5 × 106 photons/s for a 1 µm × 1 µm device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated silicon photon sources suitable for arbitrary-statistic-tolerant QKD protocols.

We investigate the second spectrum of charge carrier density fluctuations in graphene within the McWorther model, where noise is induced by electron traps in the substrate. Within this simple picture, we obtain a closed-form expression including both Gaussian and non-Gaussian fluctuations. We show that a very extended distribution of switching rates of the electron traps in the substrate leads to a carrier density power spectrum with a non-trivial structure on the scale of the measurement bandwidth. This explains the appearance of a 1=f component in the Gaussian part of the second spectrum, which adds up to the expected frequency-independent term. Finally, we find that the nonGaussian part of the second spectrum can become quantitatively relevant by approaching extremely low temperatures.

Non-enzymatic electrochemical glucose sensors are of great importance in biomedical applications, for the realization of portable diabetic testing kits and continuous glucose monitoring systems. Nanostructured materials show a number of advantages in the applications of analytical electrochemistry, compared to macroscopic electrodes, such as great sensitivity and little dependence on analyte diffusion close to the electrode-solution interface. Obtaining electrodes based on nanomaterials without using expensive lithographic techniques represents a great added value. In this paper, we modeled the chronoamperometric response towards glucose determination by four electrodes consisting of nanostructured gold onto graphene paper (GP). The nanostructures were obtained by electrochemical etch, thermal and laser processes of thin gold layer. We addressed experiments obtaining different size and shape of gold nanostructures. Electrodes have been characterized by field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry, and chronoamperometry. We modeled the current-time response at the potential corresponding to two-electrons oxidation process of glucose by the different nanostructured gold systems. The finest nanostructures of 10-200 nm were obtained by laser dewetting of 17 nm thin and 300 °C thermal dewetting of 8 nm thin gold layers, and they show that semi-infinite linear diffusion mechanism predominates over radial diffusion. Electrochemical etching and 17 nm thin gold layer dewetted at 400 °C consist of larger gold islands up to 1 ?m. In the latter case, the current-time curves can be fitted by a two-phase exponential decay function that relies on the mixed second-order formation of adsorbed glucose intermediate followed by its first-order decay to gluconolactone.

In this work, we report a study on the effect of the laser-assisted alloying effect on plasmonic properties of Pd and Au-Pd nanostructures using surface-enhanced Raman spectroscopy (SERS). The monometallic and bimetallic nanostructures are formed by nanosecond-laser induced de-wetting and the alloying of pure Pd and bimetallic Au-Pd nanoscale-thick films deposited on a transparent and conductive substrate. The morphological characteristics of the nanostructures were changed by controlling the laser fluence. Then, 4-nitrithiophenol (4-NTP) was used as an adsorbed molecule on the surface of the nanostructures to analyze the resulting SERS properties. A quantitative analysis was reported using the SERS profile properties, such as FWHM, amplitude, and Raman peak position variation. An excellent correlation between the variation of SERS properties and the nanostructures' size was confirmed. The optical enhancement factor was estimated for Pd and Au-Pd nanostructures for the laser fluence (0, 0.5, 0.75, 1, and 1.5 J/cm2).

Titanium dioxide nanoparticles (TiO2 -NPs) are used intensively. Thanks to their extremely small size (1-100 nm), TiO2 -NPs are more absorbable by living organisms; consequently, they can cross the circulatory system and then be distributed in various organs including the reproductive organs. We have evaluated the possible toxic effect of TiO2 -NPs on embryonic development and the male reproductive system using Danio rerio as an organism model. TiO2 -NPs (P25, Degussa) were tested at concentrations of 1 mg/L, 2 mg/L, and 4 mg/L. TiO2 -NPs did not interfere with the embryonic development of Danio rerio, however, in the male gonads the TiO2 -NPs caused an alteration of the morphological/structural organization. The immunofluorescence investigation showed positivity for biomarkers of oxidative stress and sex hormone binding globulin (SHBG), both confirmed by the results of qRT-PCR. In addition, an increased expression of the gene responsible for the conversion of testosterone to dihydrotestosterone was found. Since Leydig cells are mainly involved in this activity, an increase in gene activity can be explained by the ability of TiO2 -NPs to act as endocrine disruptors, and, therefore, with androgenic activity.

Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained is simulated with a finite element method/phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behaviour of melt silicon-germanium.

In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of Al2O3 and HfO2 on gold-supported monolayer (1L) MoS2 is investigated, providing an insight on the mechanisms ruling the nucleation in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-MoS2 exfoliated on sputter-grown Au/Ni films demonstrated: (i) a tensile strain (from 0.1 to 0.3%) and p-type doping (from 1 × 1012 to 4 × 1012 cm-2) distribution at micro-scale; (ii) an almost conformal MoS2 membrane to the Au grains topography, with some locally detached regions, indicating the occurrence of strain variations at the nanoscale; (iii) atomic scale variability (from ~ 4.0 to ~ 4.5 Å) in the Mo-Au atomic distances was detected, depending on the local configuration of Au nanograins. Ab initio DFT calculations of a free-standing MoS2 layer and a simplified MoS2/Au(1 1 1) interface model showed a significant influence of the Au substrate on the MoS2 energy band structure, whereas small differences were accounted for the adsorption of H2O, TMA (co-reactant, and Al-precursor, respectively) molecules, and a slight improved adsorption was predicted for TDMAHf (Hf-precursor). This suggests a crucial role of nanoscale morphological effects, such as the experimentally observed local curvature and strain of the MoS2 membrane, in the enhanced physisorption of the precursors. Afterwards the nucleation and growth of Al2O3 an HfO2 films onto 1L-MoS2/Au was investigated in detail, by monitoring the surface coverage as a function of the number (N) of ALD cycles, with N from 10 to 120. At low N values, a slower growth rate of the initially formed nuclei was observed for HfO2, probably due to the bulky nature of the TDMAHf precursor as compared to TMA. On the other hand, the formation of continuous films was obtained in both cases for N > 80 ALD cycles, corresponding to ~ 3.6 nm Al2O3 and ~ 3.1 nm HfO2. Current mapping on these ultra-thin films by conductive-AFM showed, for the same applied bias, a uniform insulating behavior of Al2O3 and the occurrence of few localized breakdown spots in the case of HfO2, associated to a less compact films regions. Finally, an increase of the 1L-MoS2 tensile strain was observed by Raman mapping after encapsulation with both high-? films, accompanied by a reduction in the PL intensity, explained by the effects of strain and the higher effective dielectric constant of the surrounding environment.

The integration of transition metal dichalcogenides (TMDs) thin films into Si CMOS-based devices requires the development of new bottom-up material growth approaches producing high crystallinity films without affecting the SiO2/Si substrate. For this purpose, sputtering is a suitable deposition method due to its simplicity, jointly with high reliability and large area deposition capabilities. However, sputtered layers are amorphous and require a post-deposition thermal treatment to obtain a highly crystalline film. Nanosecond pulsed laser annealing (PLA) has recently emerged as promising route to achieve large-scale crystalline TMDs films without significantly heating or affecting the underlying substrate. The aim of this work is to explore the possibility to produce crystalline 2H-MoS2 on large areas directly on a SiO2-on-Si substrate. The film structure, composition and morphology were monitored as a function of the laser pulse energy density by Raman spectroscopy, X-rays diffraction, Rutherford backscattered spectroscopy (RBS), scanning transmission electron microscopy (STEM) and atomic force microscopy (AFM). The electrical properties of the film with optimized crystallinity were finally investigated through deposition of Cr/Au contacts using shadow masks. This approach can be scaled to other TMDs materials and substrates, also paving the way for the fabrication of heterostructures and electrical devices on the top of a single substrate.

Despite numerous technological applications associated to nickel silicide thin films, their formation mechanisms are still far from being understood. We combined experimental and numerical approaches to unravel the early stages of nickel silicide formation with an atomistic precision. In particular, we employed first principles calculations, X-ray reflectivity as well as high-resolution scanning transmission electron microscopy analyses. Altogether, our work demonstrates that during nickel deposition on top of a silicon surface, an interface alloyed layer is formed even at room temperature before any thermal activation. Moreover, we managed to determine that this interfacial layer has a nickel-rich Ni3Si composition which is favored by the ability of nickel atoms to penetrate the surface layers of the silicon substrate.

Extremely efficient phosphorus drive-in into a high resistivity (100) Si substrate is achieved by an advanced doping technology, providing precise control over the amount of electrically active impurity dopants that are introduced into the semiconductor. A phosphorus ?-layer on deglazed and not deglazed silicon surfaces is formed by means of polystyrene homopolymers terminated with a P containing moiety. The P atoms from the ?-layer are injected into the Si substrate by a standard high temperature annealing in a rapid thermal processing (RTP) machine, operating at 1200 °C for 5 s. Depth distribution of the P atoms upon the drive-in procedure is investigated by ToF-SIMS analysis, highlighting the effective capability to inject the dopant impurities into the semiconductor substrate. Room temperature Hall measurements in van der Pauw configuration are performed as a function of the processing conditions to investigate the activation rates (?a) of injected P atoms. Remarkably, depending on the surface characteristic before the grafting of the phosphorus terminated polymers, significantly different ?a values are attained. More precisely ?a ~80% are achieved in the case of not deglazed Si surfaces. Conversely ?a ~100% are measured in the case of deglazed Si surfaces, providing a clear evidence of a full activation of the dopant impurities injected into the silicon substrate. These experimental results path the way to the development of a mild and efficient technology for the doping of semiconductors.