Articolo in rivista, 2010, ENG, 10.1002/adfm.200901424
M. Melucci, L. Favaretto, M. Cavallini, A. Zanelli, A. Bongini, P. Maccagnani, P. Ostoja, G. Dereu, R. Lazzaroni, G. Barbarella
1. CNR, ISOF, I-40129 Bologna, Italy 2. CNR, ISMN, I-40129 Bologna, Italy 3. Univ Bologna, Dipartimento Chim G Ciamician, I-40122 Bologna, Italy 4. CNR, IMM, I-40129 Bologna, Italy 5. Univ Mons, Serv Chim Mat Nouveaux, B-7000 Mons, Belgiumgium
Newly synthesized thiophene (T) and benzothiadiazole (B) co-oligomers of different size, alternation motifs, and alkyl substitution types are reported. Combined spectroscopic data, electrochemical analysis, and theoretical calculations show that the insertion of a single electron-deficient B unit into the aromatic backbone strongly affects the LUMO energy level. The insertion of additional B units has only a minor effect on the electronic properties. Cast films of oligomers with two alternated B rings (B-T-B inner core) display crystalline order. Bottom-contact FETs based on films cast on bare SiO2 show hole-charge mobilities of 1 x 10(-3)-5 x 10(-3) cm(2) V-1 s(-1) and I-on/I-off ratios of 10(5)-10(6). Solution-cast films of cyclohexyl-substituted compounds are amorphous and do not show FET behavior. However, the lack of order observed in these films can be overcome by nanorubbing and unconventional wet lithography, which allow for fine control of structural order in thin deposits.
Advanced functional materials (Print) 20 (3), pp. 445–452
FIELD-EFFECT TRANSISTORS, SOLID-STATE PROPERTIES, ORGANIC ELECTRONICS;, OLIGOTHIOPHENES
Barbarella Giovanna, Maccagnani Piera, Favaretto Laura, Cavallini Massimiliano, Zanelli Alberto, Melucci Manuela, Ostoja Paolo
IMM – Istituto per la microelettronica e microsistemi, ISOF – Istituto per la sintesi organica e la fotoreattività, ISMN – Istituto per lo studio dei materiali nanostrutturati
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:172390
DOI: 10.1002/adfm.200901424
ISI Web of Science (WOS): 000274644400010