Articolo in rivista, 2013, ENG, 10.1063/1.4795268

B-doping in Ge by excimer laser annealing

Impellizzeri G, Napolitani E, Boninelli S, Fisicaro G, Cuscunà M, Milazzo R, La Magna A, Fortunato G, Priolo F, Privitera V

[ 1 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 3 ] Univ Padua, CNR IMM MATIS, I-35131 Padua, Italy [ 4 ] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy [ 5 ] CNR IMM, I-95121 Catania, Italy [ 6 ] CNR IMM, I-00133 Rome, Italy

An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 x 10 15, or 1 x 10(16) B/cm(2)) and processed by ELA (lambda = 308 nm) with multiple pulses (1, 3, or 10). We also developed a diffusion model, in order to simulate the B redistribution induced by the ELA process. We found an anomalous impurity redistribution in the molten phase, which causes a dopant incorporation during the melt-growth at the maximum melt depth. The investigated samples showed a partial electrical activation of the B dopant. The inactivation of B in the samples implanted with 1 x 10(15) B/cm(2) was correlated to an oxygen contamination, while the poor electrical activation of B in the samples implanted with 1 x 10(16) B/cm(2) was related to the precipitation of the dopant, in good agreement with the experimental and theoretical results.

Journal of applied physics 113 (11), pp. 113505–?

Keywords

CNR authors

Priolo Francesco, Fisicaro Giuseppe, Privitera Vittorio, Fortunato Guglielmo, La Magna Antonino, Cuscuna Massimo, Boninelli Simona Maria Cristina, Napolitani Enrico, Impellizzeri Giuliana

CNR institutes

IMM – Istituto per la microelettronica e microsistemi, IMM – Istituto per la microelettronica e microsistemi, IMM – Istituto per la microelettronica e microsistemi