Articolo in rivista, 2011, ENG, 10.1016/j.nima.2010.06.133

Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors

Marchini L.; Zambelli N.; Piacentini G.; Zha M.; Calestani D.; Belas E.; Zappettini A.

[ 1 ] IMEM CNR, I-43100 Parma, Italy [ 2 ] Charles Univ Prague, Inst Phys, CZ-12116 Prague 2, Czech Republic

CdZnTe crystals for the preparation of X-ray imaging detectors have been grown by the boron oxide encapsulated vertical Bridgman method. The homogeneity of the crystals has been studied by photoluminescence mapping, energy dispersion X-ray analysis, and resistivity mapping. The zinc distribution follows an anomalous behavior that deviates from the normal freezing equation. The wafers cut perpendicular to the growth direction show an homogeneous resistivity distribution, suggesting the possible exploitation of these crystals for the production of large volume imaging detectors.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 633 (1), pp. S92–S94

Keywords

CZT, photoluminescence mapping, Zn segregation

CNR authors

Marchini Laura, Zha Mingzheng, Zambelli Nicola, Zappettini Andrea, Calestani Davide

CNR institutes

IMEM – Istituto dei materiali per l'elettronica ed il magnetismo