CdZnTe crystals for the preparation of X-ray imaging detectors have been grown by the boron oxide encapsulated vertical Bridgman method. The homogeneity of the crystals has been studied by photoluminescence mapping, energy dispersion X-ray analysis, and resistivity mapping. The zinc distribution follows an anomalous behavior that deviates from the normal freezing equation. The wafers cut perpendicular to the growth direction show an homogeneous resistivity distribution, suggesting the possible exploitation of these crystals for the production of large volume imaging detectors.