Rassegna della letteratura scientifica in rivista (Literature review), 2017, ENG, 10.1116/1.4971389
Ahvenniemi E.; Akbashev A.R.; Ali S.; Bechelany M.; Berdova M.; Boyadjiev S.; Cameron D.C.; Chen R.; Chubarov M.; Cremers V.; Devi A.; Drozd V.; Elnikova L.; Gottardi G.; Grigoras K.; Hausmann D.M.; Hwang C.S.; Jen S.-H.; Kallio T.; Kanervo J.; Khmelnitskiy I.; Kim D.H.; Klibanov L.; Koshtyal Y.; Krause A.O.I.; Kuhs J.; Karkkanen I.; Kaariainen M.-L.; Kaariainen T.; Lamagna L.; Lapicki A.A.; Leskela M.; Lipsanen H.; Lyytinen J.; Malkov A.; Malygin A.; Mennad A.; Militzer C.; Molarius J.; Norek M.; Ozgit-Akgun C.; Panov M.; Pedersen H.; Piallat F.; Popov G.; Puurunen R.L.; Rampelberg G.; Ras R.H.A.; Rauwel E.; Roozeboom F.; Sajavaara T.; Salami H.; Savin H.; Schneider N.; Seidel T.E.; Sundqvist J.; Suyatin D.B.; Torndahl T.; Van Ommen J.R.; Wiemer C.; Ylivaara O.M.E.; Yurkevich O.
Department of Chemistry, Aalto University, P.O. Box 16100, Espoo, FI-00076, , Finland; Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, , United States; Department of Materials Science and Engineering, Aalto University, School of Chemical Technology, P.O. Box 16200, Aalto, FI-00076, , Finland; Institut Européen des Membranes IEM UMR-5635, Université de Montpellier, ENSCM, CNRS, Place Eugène Bataillon, Montpellier Cedex 5, F-34095, , , , , France; Institut Européen des Membranes IEM UMR-5635, Université de Montpellier, ENSCM, CNRS, Place Eugène Bataillon, Montpellier Cedex 5, F-34095, , , , , France; Institut Européen des Membranes IEM UMR-5635, Université de Montpellier, ENSCM, CNRS, Place Eugène Bataillon, Montpellier Cedex 5, F-34095, , , , , France; Institut Européen des Membranes IEM UMR-5635, Université de Montpellier, ENSCM, CNRS, Place Eugène Bataillon, Montpellier Cedex 5, F-34095, , , , , France; Industrial Focus Group XUV Optics, University of Twente, Enschede, 7522 ND, , Netherlands; Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd., Sofia, 1784, , , Bulgaria; Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd., Sofia, 1784, , , Bulgaria; CEPLANT, Masaryk University, Kotlá?ská 267/2, Brno, 611 37, , Czech Republic; School of Mechanical Science and Engineering, School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, , China; Univ. Grenoble Alpes, CNRS, SIMAP, Grenoble, F-38000, , , , France; Univ. Grenoble Alpes, CNRS, SIMAP, Grenoble, F-38000, , , , France; Univ. Grenoble Alpes, CNRS, SIMAP, Grenoble, F-38000, , , , France; Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, Ghent, 9000, , Belgium; Inorganic Materials Chemistry, Ruhr University Bochum, Bochum, 44801, , Germany; Institute of Chemistry, St.-Petersburg State University, Universitetskaya emb. 7/9, St.-Petersburg, 199034, , Russian Federation; Institute for Theoretical and Experimental Physics, Bolshaya Cheremushkinskaya 25, Moscow, 117218, , Russian Federation; Fondazione Bruno Kessler, Center for Materials and Microsystems, Trento, 38123, , Italy; VTT Technical Research Centre of Finland, P.O. Box 1000 (Tietotie 3, Espoo), VTT, FI-02044, , Finland; Lam Research Corporation, Tualatin, OR, 97062, , United States; Department of Materials Science and Engineering, Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, , , South Korea; Department of Materials Science and Engineering, Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, , , South Korea; Globalfoundries, Albany, NY, 12203, , United States; Department of Chemistry, School of Chemical Engineering, Aalto University, P.O. Box 16100, Aalto, FI-00076, , Finland; Åbo Akademi, Turku, FI-20500, , Finland; Research and Education Center Nanotechnology, Saint Petersburg Electrotechnical University LETI, ul. Professora Popova 5, St.-Petersburg, 197376, , Russian Federation; Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, , United States; Techinsights, 3000 Solandt Road, Ottawa, ON, K2K2X2, , Canada; Laboratory of Lithium-Ion Technology, Ioffe Institute, 26 Politekhnicheskaya, St-Petersburg, 194021, , Russian Federation; Sentech Instruments GmbH, Schwarzschildstr.2, Berlin, 12489, , Germany; NovaldMedical Ltd Oy, Telkäntie 5, Kitee, FI-82500, , Finland; Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55 (A.I.Virtasen aukio 1), Helsinki, FI-00014, , Finland; STMicroelectronics, Via C. Olivetti 2, Agrate Brianza (MB), 20864, , Italy; Seagate Technology (Ireland), 1 Disc Drive, Derry, BT48 7BD, , United Kingdom; Department of Chemistry, University of Helsinki, P.O. Box 55, Helsinki, FI-00014, , Finland; Department of Micro- and Nanosciences, Aalto University, Tietotie 3, Espoo, 02150, , Finland; Department of Chemical Nanotechnology and Materials for Electronics, St. Petersburg State Institute of Technology (Technical University), 26 Moskovsky prosp., St.-Petersburg, 190013, , Russian Federation; Unité de Développement des Equipements Solaires, Udes, Centre de Développement des Energies Renouvelables, CDER, RN 11 B.P. 386, Bou-Ismail, Tipaza, 42415, , Algeria; Physical Chemistry, Institute of Chemistry, Technische Universität Chemnitz, Straße der Nationen 62, Chemnitz, 09111, , Germany; Summa Semiconductor Oy, PL 11, Espoo, 02131, , Finland; Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Str. Kaliskiego 2, Warszawa, 00-908, , Poland; ASELSAN Inc.-Microelectronics, Guidance and Electro-Optics Business Sector, Ankara, 06750, , Turkey; Centre of Microtechnology and Diagnostics, Saint Petersburg Electrotechnical University LETI, ul. Professora Popova 5, St.-Petersburg, 197376, , Russian Federation; Department of Physics, Chemistry and Biology, Linköping University, Linköping, SE-581 83, , Sweden; KOBUS, Montbonnot Saint Martin, 38330, , France; IPVF, 8 rue de la Renaissance, Antony, 92160, , France; Department of Applied Physics, Aalto University, Puumiehenkuja 2, Espoo, 02150, , Finland; Tartu College, Tallinn University of Technology, Puiestee 78, Tartu, 51008, , Estonia; Department of Applied Physics, Group Plasma and Materials Processing, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, , Netherlands; Department of Physics, University of Jyvaskyla, P.O. Box 35, Jyväskylä, 40014, , Finland; Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD, 20742, , , United States; Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD, 20742, , , United States; TNO, High Tech Campus 21, Eindhoven, 5656 AE, , Netherlands; IRDEP-CNRS, 6 quai Watier, Chatou, 78401, , France; System Integration and Technology Transfer, Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Winterbergstr. 28, Dresden, 01277, , Germany; Division of Solid State Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, , , Sweden; Division of Solid State Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, , , Sweden; Solid State Electronics, Uppsala University, P.O. Box 534, Uppsala, SE-751 21, , Sweden; Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, Delft, 2629 HZ, , Netherlands; Laboratorio MDM, IMM-CNR, via C. Olivetti 2, Agrate Brianza (MB), 20864, , Italy; Research and Educational Center Functional Nanomaterials, Immanuel Kant Baltic Federal University, A. Nevskogo 14, Kaliningrad, 236041, , Russian Federation; NovaldMedical Ltd. Oy, Telkäntie 5, Kitee, 82500, , Finland
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
Journal of vacuum science & technology. A. Vacuum, surfaces, and films 35 , pp. 010801–?
atomic layer deposition, chemical deposition, atomic layer epitaxy
ID: 452643
Year: 2017
Type: Rassegna della letteratura scientifica in rivista (Literature review)
Creation: 2021-04-13 20:12:48.000
Last update: 2021-04-13 20:12:48.000
CNR authors
CNR institutes
External links
OAI-PMH: Dublin Core
OAI-PMH: Mods
OAI-PMH: RDF
DOI: 10.1116/1.4971389
URL: http://www.scopus.com/record/display.url?eid=2-s2.0-85007005785&origin=inward
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:452643
DOI: 10.1116/1.4971389
Scopus: 2-s2.0-85007005785
ISI Web of Science (WOS): 000392120900050