Articolo in rivista, 2022, ENG, 10.1021/acs.jpcc.1c10053

Electronic Structure of V<inf>x</inf>Ti<inf>1- x</inf>Se<inf>2</inf>Solid Solutions with the (V,Ti)Se<inf>2</inf>Structural Fragments

Shkvarin, A. S.; Merentsov, A. I.; Postnikov, M. S.; Yarmoshenko, Yu M.; Shkvarina, E. G.; Suslov, E. A.; Kuznetsova, A. Yu; Pí?, I.; Nappini, S.; Bondino, F.; Moras, P.; Sheverdyaeva, P. M.; Betz-Guttner, E.; Titov, A. N.

M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Ekaterinburg, Russia Elettra-Sincrotrone Trieste S.C.p.A, 34149 Trieste, Italy IOM-CNR, Laboratorio TASC, 34149 Trieste, Italy Istituto di Struttura della Materia-CNR (ISM-CNR), 34149 Trieste, Italy

The equilibrium boundary for the layered VTiSesolid solution was determined according to a set of experimental data of synchrotron radiation X-ray photoelectron spectroscopy and electromotive force of the Li|Li|VTiSeelectrochemical cells. This boundary appears to be 20 mol % of V (x = 0.2). The formation of the VSestructural fragments, which are tightly bounded with VTiSelayers, appears at x > 0.2. A combined analysis of the Fermi-surface maps and the atomic force microscopy images reveals that the (001) planes in VSeand VTiSestructural fragments are parallel to each other. At the same time, these fragments demonstrate turbostratic disordering within the basal plane. The formation of such pseudo-homogeneous materials is associated with the contribution of the free surface energy, which is relatively high in the quasi-two-dimensional materials.

Journal of physical chemistry. C 126 (16), pp. 7076–7085

Keywords

photoelectron spectroscopies, electronic structure, VxTi1-xSe2 materials

CNR authors

Moras Paolo, Nappini Silvia, Sheverdyaeva Polina, Bondino Federica

CNR institutes

ISM – Istituto di struttura della materia, IOM – Istituto officina dei materiali