Articolo in rivista, 2023, ENG, 10.1016/j.carbon.2023.02.011

Adsorption and decomposition steps on Cu(111) of liquid aromatic hydrocarbon precursors for low-temperature CVD of graphene: A DFT study

Tau, Onofrio; Lovergine, Nico; Prete, Paola

University of Salento; National Institute of Nuclear Physics INFN; National Research Council CNR IMM

Low-temperature chemical vapor deposition (LT-CVD) of graphene using liquid aromatic hydrocarbons holds technological advantages over conventional growth from methane. However, the nature of decomposition mechanisms of such precursors and their effectiveness in a LT-CVD process is still debated. We investigate by means of density functional theory adsorption energies and decomposition first steps on Cu(111) of single-ring aromatic hydrocarbons, such as benzene and toluene. Our results confirm the stronger stability with respect to methane of aromatic adsorbates, due to exchange of London dispersion forces with Cu surface; however, toluene exhibits improved bindings with respect to benzene. The adsorption energy slightly improves if additional methyl groups are substituted in benzene, as in o-xylene and 1,2,3-trimethylbenzene. Among decomposition reactions, dehydrogenation of the methyl group in toluene is energetically more favored (1.20 eV) than that of methane (1.52 eV) or aromatic C-rings (1.67 eV and 1.72 eV for benzene and toluene), while demethylation of toluene remains negligible due to the prohibitive energy barrier (2.49 eV). Methyl dehydrogenation in toluene leads to the abundant formation of adsorbed benzyl radicals onto Cu in an almost parallel-to-surface configu-ration, as active species for graphene nucleation. Toluene (and to a lesser extent o-xylene and 1,2,3-trimethyl-benzene) should be thus preferred to benzene in LT-CVD of graphene.

Carbon 206 , pp. 142–149

Keywords

Graphene, Low -temperature CVD, Aromatic hydrocarbon precursors, DFT calculations, Surface adsorption, Cu -catalyzed surface decomposition

CNR authors

Prete Paola

CNR institutes

IMM – Istituto per la microelettronica e microsistemi

ID: 480201

Year: 2023

Type: Articolo in rivista

Creation: 2023-04-12 16:50:01.000

Last update: 2023-04-12 18:49:02.000

CNR authors

External IDs

CNR OAI-PMH: oai:it.cnr:prodotti:480201

DOI: 10.1016/j.carbon.2023.02.011

ISI Web of Science (WOS): 000946707000001

Scopus: S0008622323000817