Contributo in atti di convegno, 2008, ENG, 10.4229/23rdEUPVSEC2008-2DV.1.31

Surface passivation of multi-Si for heterojunction solar cells

Asha AS, Canino M, Summonte C, Binetti S, Acciarri M, Libal J, Cavalcoli D, Cavallini A

CNR-IMM Bologna UniBO Dip Fisica Polimi Milano

We studied the passivation effect of plasma deposited intrinsic and doped hydrogenated amorphous silicon layers on industrial grade, n-type, 1 ?cm multicrystalline silicon, aimed at the fabrication of Heterojunction (HJ) solar cells based on such material. The investigated variables include the process temperature, hydrogen dilution of silane during the intrinsic layer deposition, and passivating layer thickness. The structure of the passivating layers was analysed by optical measurements. Surface photovoltage and quasi-steady state photoconductance were used to characterize untreated and treated wafers. Thin a-Si:H layers exhibited the best passivating performance.

European Photovoltaic Solar Energy Conference and Exhibition, pp. 1938–1941, Valencia, E, 1-5 September 2008

Keywords

Heterojunction, Passivation, Multicrystalline-Silicon

CNR authors

Canino Maria Concetta, Summonte Caterina

CNR institutes

IMM – Istituto per la microelettronica e microsistemi