Contributo in atti di convegno, 2002, ENG

Heterojunction Solar Cells on Textured Silicon

Summonte C, R. Rizzoli, D. Iencinella, E. Centurioni, A. Desalvo, F. Zignani

CNR-IMM-Bo - via Gobetti 101 - I-40129 Bologna, Italy Dip. Chimica Appl. e Scienza dei Materiali - University of Bologna - Viale Risorgimento 2, 40136 Bologna, Italy

We report the results on n/p heterojunction solar cells fabricated on textured CZ silicon. Both amorphous and microcrystalline emitters were fabricated using 13.56 MHz plasma enhanced chemical vapour deposition, and a maximum fabrication temperature of 250°C. All devices include an intrinsic buffer layer and a conductive antireflecting coating. An increase of efficiency from 10.5% to 11.8% was observed with respect to devices fabricated on flat substrates. The maximum short circuit current, 34.4 mA/cm2, was observed in the case of a microcrystalline emitter. The results are discussed, and some indications for further improvements are given.

PV In Europe, Conference and Exhibition, pp. 339–342, Roma, 2002

Keywords

Heterojunction, solar cells, Silicon, Photovoltaics

CNR authors

Desalvo Agostino, Centurioni Emanuele, Rizzoli Rita, Summonte Caterina

CNR institutes

IMM – Istituto per la microelettronica e microsistemi