Contributo in atti di convegno, 2014, ENG

Analytical drain current model of both p- and n-channel OTFTs for circuit simulation

F. Torricelli, M. Ghittorelli, M. Rapisarda, L. Mariucci, S. Jacob, R. Coppard, E. Cantatore, Zs. M. Kovacs-Vajna, L. Colalongo

Department of Information Engineering, University of Brescia; CNR-IMM; CEA-LITEN; Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven

Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration, owing the availability of both p- and n- channel devices. For the technology development and the design of circuits and digital systems, the accurate physical modeling is mandatory. In this work we propose an unified analytical model for both p- and n- type OTFTs. The model is physically based and accounts for a double exponential density of states (DOS). It is simple, symmetric and accurately describes the below-threshold, linear, and saturation regimes via a unique formulation. The model is eventually validated with the measurements of complementary OTFTs fabricated in a fullyprinted technology.

SISPAD 2014 - Int. Conference on Simulation of Semiconductor Processes and Devices, Yokohama (Japan), Sep. 2014

Keywords

CNR authors

Mariucci Luigi, Rapisarda Matteo

CNR institutes

IMM – Istituto per la microelettronica e microsistemi