Articolo in rivista, 2001, ENG, 10.4028/www.scientific.net/MSF.353-356.255

Ion-irradiation effect on the Ni/SiC interface reaction

Roccaforte, F; Calcagno, L; Musumeci, P; La Via, F

Ist Nazl Fis Mat; CNR

The formation of nickel silicide induced by thermal annealing of Ni/SiC samples was studied by means of Rutherford backscattering spectrometry (RBS) and S-Ray diffraction (XRD). Nickel silicide (Ni(2)Si) could be observed already after 20 minutes annealing at 600 degreesC, even RES analysis showed a thin layer of non-reacted Ni on the top of the sample at this temperature. On the other hand, annealing at higher temperature (800 degreesC) led to the complete reaction of the deposited film. Analytical transmission electron microscopy (EDX) showed that carbon was almost uniformly distributed inside the Ni(2)Si laver. RES and Transmission Electron Microscopy (TEM) analysis showed a rough interface between the silicide and the underlying SiC. Ar(+)-irradiation of the as-deposited samples and subsequent annealing at 600 and 800 degreesC resulted in the improvement of the silicide/SiC interface with respect to the non-irradiated samples. This effect can be ascribed to the radiation induced damage in the crystalline SiC substrate, which improves the adhesion of the deposited film and enhances the mobility of Ni atoms.

Materials science forum 353-356 , pp. 255–258

Keywords

interface, ion implantation, nickel silicide

CNR authors

Roccaforte Fabrizio

CNR institutes

IMM – Istituto per la microelettronica e microsistemi