Articolo in rivista, 2017, ENG, 10.1016/j.orgel.2016.11.027
Valletta, A.; Rapisarda, M.; Calvi, S.; Fortunato, G.; Frasca, M.; Maira, G.; Ciccazzo, A.; Mariucci, L.
CNR IMM; Univ Catania; Univ Palermo; STMicroelectronics
We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices.
Organic electronics (Print) 41 , pp. 345–354
Organic thin film transistors, DC model, AC model, Contact effects, parasitic capacitance, Non-quasi static small signal model
Calvi Sabrina, Mariucci Luigi, Fortunato Guglielmo, Valletta Antonio, Rapisarda Matteo
ID: 447802
Year: 2017
Type: Articolo in rivista
Creation: 2021-03-15 16:42:31.000
Last update: 2023-07-20 11:17:50.000
CNR institutes
External IDs
CNR OAI-PMH: oai:it.cnr:prodotti:447802
DOI: 10.1016/j.orgel.2016.11.027
ISI Web of Science (WOS): 000390586300048
Scopus: 2-s2.0-85007018582